Leadframes for improved moisture reliability of semiconductor devices

ABSTRACT

A semiconductor device has a leadframe with a structure made of a base metal ( 105 ), wherein the structure consists of a chip mount pad ( 402 ) and a plurality of lead segments ( 403 ). Covering the base metal are, consecutively, a nickel layer ( 301 ) on the base metal, and a continuous layer of noble metal, which consists of a gold layer ( 201 ) on the nickel layer, and an outermost palladium layer ( 202 ) on the gold layer. A semiconductor chip ( 410 ) is attached to the chip mount pad and conductive connections ( 412 ) span from the chip to the lead segments. Polymeric encapsulation compound ( 420 ) covers the chip, the connections, and portions of the lead segments. In QFN devices with straight sides ( 501 ), the compound forms a surface ( 421 ) coplanar with the outermost palladium layer ( 202 ) on the un-encapsulated leadframe surfaces.

FIELD OF THE INVENTION

The present invention is related in general to the field ofsemiconductor devices and processes, and more specifically to thematerials and fabrication of leadframe finishes for integrated circuitdevices and semiconductor components.

DESCRIPTION OF THE RELATED ART

Leadframes for semiconductor devices provide a stable support pad forfirmly positioning the semiconductor chip, usually an integrated circuit(IC) chip, within a package. It has been common practice to manufacturesingle piece leadframes from thin (about 120 to 250 μm) sheets of metal.For reasons of easy manufacturing, the commonly selected starting metalsare copper, copper alloys, iron-nickel alloys (for instance theso-called “Alloy 42”), and aluminum. The desired shape of the leadframeis stamped or etched from the original sheet.

In addition to the chip pad, the leadframe offers a plurality ofconductive segments to bring various electrical conductors into closeproximity of the chip. The remaining gaps between the inner end of thesegments and the contact pads on the IC surface are bridged byconnectors, typically thin metal wires such as gold individually bondedto the IC contact pads and the leadframe segments. Consequently, thesurface of the inner segment ends has to be metallurgically suitable forstitch-attaching the connectors.

The end of the lead segments remote from the IC chip (“outer” ends) needto be electrically and mechanically connected to external circuitry suchas printed circuit boards. This attachment is customarily performed bysoldering, conventionally with a tin alloy solder at a reflowtemperature above 200° C. Consequently, the surface of the outer segmentends needs to have a metallurgical configuration suitable for reflowattachment to external parts.

Finally, the leadframe provides the framework for encapsulating thesensitive chip and fragile connecting wires. Encapsulation using plasticmaterials, rather than metal cans or ceramic, has been the preferredmethod due to low cost. The transfer molding process for epoxy-basedthermoset compounds at 175° C. has been practiced for many years. Thetemperature of 175° C. for molding and mold curing (polymerization) iscompatible with the temperature of >200° C. for eutectic solder reflow.

Reliability tests in moist environments require that the moldingcompounds have good adhesion to the leadframe and the device parts itencapsulates. Two major contributors to good adhesion are the chemicalaffinity between the molding compound and the metal finish of theleadframe, and the surface roughness of the leadframe.

In recent years, a number of technical trends have made it more and morecomplicated to find a satisfactory solution for the diverserequirements. As an example, the package dimensions are shrinking,offering less surface for adhesion. Then, the requirement to uselead-free solders pushes the reflow temperature range into theneighborhood of about 260° C., making it more difficult to maintain moldcompound adhesion to the leadframes. This is especially true for thevery small leadframe surface available in QFN (Quad Flat No-lead) andSON (Small Outline No-lead) devices.

SUMMARY OF THE INVENTION

Applicant recognizes the need for a fresh concept of achieving low-costdevice fabrication using leadframe structures tailor-made for highreliability of semiconductor devices. The low-cost leadframes are tooffer a combination of adhesion to molding compounds, bondability forconnecting wires, solderablity of the exposed leadframe segments, and norisk of tin dendrite growth.

There are technical advantages, when the leadframe and its method offabrication are flexible enough to be applied for differentsemiconductor product families and a wide spectrum of design andassembly variations, and achieve improvements toward the goals ofimproved process yields and device reliability. There are furthertechnical advantages, when these innovations are accomplished using theinstalled equipment base so that no investment in new manufacturingmachines is needed.

One embodiment of the invention is a leadframe strip with a structuremade of a base metal, wherein the structure has a plurality of surfaces.On the base metal surfaces is a layer of noble metal, which includes alayer of gold followed by an outermost layer of palladium in contactwith the gold layer. Furthermore, there may be a nickel layer betweenthe base metal surfaces and the noble metal layer so that the nickellayer is in contact with the base metal surfaces and with the goldlayer.

In terms of preferred thicknesses, the gold layer is between about 2 and5 nm, preferably about 3 nm thick, the palladium layer between about 5and 15 nm, preferably about 10 nm thick, and the nickel layer betweenabout 0.5 and 2.0 μm thick. The thinness of the precious metal layersand the preferred process of electrolytic plating provide low costleadframes. Palladium offers excellent adhesion to molding compounds,and, together with the underlying gold, excellent bondability andsolderability.

Another embodiment of the invention is a semiconductor device, which hasa leadframe with a structure made of a base metal, wherein the structureincludes a chip mount pad and a plurality of lead segments. Covering thebase metal is noble metal layer, which consists of a gold layer incontact with the base metal and an outermost palladium layer in contactwith the gold layer. Alternatively, a nickel layer may be between thebase metal and the noble metal layer so that the nickel layer is incontact with the base metal and with the gold layer. A semiconductorchip is attached to the chip mount pad, and conductive connections spanfrom the chip to the lead segments. Polymeric encapsulation materialcovers the chip, the connections and portions of the lead segments.

Another embodiment of the invention is a method for fabricating aleadframe. A base metal structure with a plurality of surfaces isprovided. A stack of metal layers adherent to the base metal is platedon each of the surfaces. While electrolytical plating is the preferredmethod, electroless plating is an alternative. These plating stepsconsist consecutively of plating a gold layer, preferably about 3 nmthick, to cover substantially the base metal, and plating a palladiumlayer, preferably about 10 nm thick, to cover substantially the goldlayer. A nickel layer, between about 0.5 and 2.0 μm thick, may be platedbetween the base metal and the gold layer. All plating steps can beperformed without masking or selective plating and are thus low cost.

It belongs to the technical advantages of the invention that no toxic orwhiskering materials are used for the plating steps, down-bondingcapability is enhanced, adhesion to molding compounds is enhanced, andmoisture-level device quality is improved. Furthermore, the requiredplating processes are inexpensive and easy to manufacture.

The technical advances represented by certain embodiments of theinvention will become apparent from the following description of thepreferred embodiments of the invention, when considered in conjunctionwith the accompanying drawings and the novel features set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross section of the base metal structure of aportion of a leadframe strip with formed leadframe structures.

FIG. 2 illustrates a schematic cross section of a leadframe stripportion with a base metal structure and plurality of surfaces, whereinthe surfaces have been plated with a stack of adherent layers accordingto the invention.

FIG. 3 illustrates a schematic cross section of a device embodiment ofthe invention, showing a portion of a leadframe strip, preparedaccording an embodiment of the invention, and a plurality ofsemiconductor chips assembled and encapsulated on one leadframe surface.

FIG. 4 illustrates a schematic cross section of a singulated device ofthe QFN/SON type, which includes a leadframe prepared according to theinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 illustrates a schematic cross section of a leadframe portiongenerally designated 100, which is intended to be used on thefabrication of a semiconductor device. The leadframe has a structuremade from a sheet of metal, wherein the structure has a plurality ofsurfaces: the first surface 101, the second surface 102, and numerousside edge surfaces 110 a, 110 b . . . 110 n. While the surfaces 101 and102 originate from the surfaces of the sheet of starting material, theside edge surfaces 110 a to 110 n have been created by the formingprocess of the leadframe structure. In the example of FIG. 1, theleadframe portion depicted contains a plurality of portions 103, whichare intended to become chip mount pads, and a plurality of portions 104,which are intended to become the lead segments of thedevice-to-be-built. The leadframe is made of a base metal 105.

As defined herein, the starting material of the leadframe is called the“base metal”, indicating the type of metal. Consequently, the term “basemetal” is not to be construed in an electrochemical sense (as inopposition to ‘noble metal’) or in a structural sense.

Base metal 105 is typically copper or a copper alloy. Other choicescomprise brass, aluminum, iron-nickel alloys (“Alloy 42”), and Kovar.

Base metal 105 originates with a metal sheet in the preferred thicknessrange from 100 to 300 μm; thinner sheets are possible. The ductility inthis thickness range provides the 5 to 15% elongation that facilitatesthe segment bending and forming operation needed for some of thefinished devices (for instance, for surface mount devices). Theleadframe parts such as chip mount pads, lead segments, connecting rails(not shown in FIG. 1, but hinted at by dashed lines) are stamped oretched from the starting metal sheet. As stated, these stamping oretching processes create numerous side edges 110 a, 110 b . . . 110 n,of the leadframe parts.

FIG. 2 illustrates a schematic cross section of a leadframe stripaccording to an embodiment of the invention. The leadframe structure hasa base metal 105 with a plurality of surfaces, which were created by theprocess of stamping or etching. The preferred metal for the base iscopper or a copper alloy. As stated above, alternatively the base metalis selected from a group consisting of aluminum, an iron-nickel alloy(such as Alloy 42), and Kovar. A layer 210 of noble metal adheres to thebase metal surfaces. The noble metal layer 210 includes a layer 201 ofgold in contact with the base metal surfaces followed by an outermostlayer 202 of palladium in contact with the gold layer. The gold layer201 has a thickness between about 2 and 5 nm, preferably about 3 nm. Thepalladium layer has a thickness between about 5 and 15 nm, preferably 10nm.

FIG. 3 illustrates a leadframe strip according to another embodiment ofthe invention. The leadframe structure has a base metal 105 with aplurality of surfaces, which were created by the process of stamping oretching. A stack of metal layers adheres to each of the structuresurfaces. The stack consists of a nickel layer 301 in contact with basemetal 105, covering substantially the entire base metal surfaces, and alayer of noble metal covering substantially the entire nickel layer. Thepreferred thickness range of the nickel layer is between about 0.5 and2.0 μm.

The layer of noble metal is substantially pinhole-free in order toprovide an unoxidized nickel surface for uniform and reliablesolderability of the finished device, which incorporates the leadframe.The layer of noble metal further needs to provide strong and reliableadhesion to polymerized molding compounds, which are preferably used fordevice encapsulation. Palladium is the preferred metal for adhesion toplastic encapsulants. However, a palladium layer thickness suitable forreliably providing the desired adhesion may be porous and may displayoccasional pinholes, unless the palladium layer is backed up by anotherthin, continuous noble metal layer, preferably gold. The resulting noblemetal layer is thus actually composed of two noble metal layers, boththin and, consequently, low cost.

As illustrated in FIG. 3, next to the nickel layer 301 is a gold layer201 in contact with the nickel layer. The preferred thickness range ofthe gold layer is between about 2 and 5 nm; the most preferred thicknessis about 3 nm. Finally, the outermost layer 202 is a palladium layer incontact with the gold layer. The preferred thickness range of thepalladium layer is between about 5 and 15 nm; the most preferredthickness is about 10 nm. In these thickness ranges, the palladium andgold layers offer good bondability, especially for gold bond wires. Inaddition, the palladium and gold layers offer good solderability.

Since all leadframe surfaces are covered by the stack of metal layers,the preferred layer deposition process is electrolytical plating. Thewhole leadframe strip is moved through a consecutive array of platingbaths (see below) and masking steps can be avoided. Alternatively,electroless plating may be chosen for certain device types, or forpost-molding processes.

Another embodiment of the invention is a semiconductor device, asexemplified by the Quad Flat No-leads (QFN) or Small Outline No-leads(SON) device in FIG. 4, which shows a leadframe strip with a pluralityof assembled and packaged devices before device singulation. In theembodiment of the invention, the device has a leadframe with a structuremade from a sheet of base metal 105; the sheet has a first surface 401 aand a second surface 401 b. A preferred example for the base metal iscopper or copper alloy. The leadframe structure in FIG. 4 includes achip mount pad 402 and a plurality of lead segments 403. Each leadsegment has a first end 403 a near chip mount pad 402, and a second end403 b remote from mount pad 402.

The first leadframe surface 401 a, the second leadframe surface 401 b,and all side edges of the structure are covered by a stack of layers,which provides the leadframe with reliable adhesion to polymericmaterials and metallurgical affinity to bonding wire metals and reflowmetals. In the example shown in FIG. 4, the stack of layers consists ofa nickel layer 301 in contact with the base metal 105, and a continuouslayer of noble metal in contact with the nickel layer. The noble metallayer includes a gold layer 201 in contact with the nickel layer, and anoutermost palladium layer 202 in contact with the gold layer.

A semiconductor chip 410, for example a silicon integrated circuit chip,is attached by means of an adhesive layer 411 to each chip mount pad402. Conductive connections 412, such as bonding wires made of gold orgold alloy, span from chip 410 to the lead segments 403 and interconnectthe chip with the first ends 403 a of the lead segments. The stitch bond412 a is pressure bonded to the noble metal layer (palladium layer andgold layer) for reliable stitch attachment.

Polymeric encapsulation material 420, for example epoxy-based moldingcompound, covers chip 410, bonding wires 412 and the outermost layer 202on the first leadframe surface 401 a of the lead segments. The polymericmaterial 420 also fills the gaps between chip 410 and the first ends ofthe lead segments and thus covers the leadframe side edges. In QFN/SONdevices, the polymeric compound 420 forms a surface 421 coplanar with(in the same plane as) the outermost palladium layer 202 on the secondleadframe surface 401 b. Polymeric material 420 leaves the noble metalon the second leadframe surface 401 b not covered.

These exposed portions of the second leadframe surface are thusavailable to be contacted by reflow metals. As an example, tin or a tinalloy may cover at least the portion of the second ends of the leadsegments, or alternatively all of the lead segments and the exposedouter chip pad surface. Reflow metals serve to interconnect,mechanically and electrically, the device to an external part such as acircuit board.

In FIG. 4, dashed lines 430 indicate the locations, where a saw will cut(singulate) the completed leadframe strip into individual devices of theQFN/SON package type. The saw is cutting through encapsulation material420 as well as through the leadframe segments. A resulting singulatedQFN/SON device with straight sides 501 is illustrated in FIG. 5. Insurface mount devices, a standard trim/form step replaces the cuttingstep with a saw.

Another embodiment of the invention is a method for fabricating aleadframe, which starts with the step of providing a structured basemetal strip with a plurality of surfaces, and continues with the stepsof plating metal layers on these surfaces. For many device types,electrolytic plating of the leadframe strips is the preferred method.Other device types may require electroless plating. As an example, inorder to fabricate the leadframe strip of FIG. 3 for use in the QFN/SONdevices of FIGS. 4 and 5, the sequence of the consecutive plating stepsis:

Plating a layer of nickel on the base metal in the thickness range fromabout 0.5 to 2.0 μm.

Plating a layer of gold on the nickel layer in the thickness range fromabout 2 to 5 nm; preferred thickness is about 3 nm.

Plating a layer of palladium on the gold layer in the thickness rangefrom about 5 to 15 nm; preferred thickness is about 10 nm.

Electrolytic plating allows consecutive reel-to-reel processing and is,therefore, inexpensive and suitable for high throughput. Electrolessplating is suitable for post-mold plating and can also be arranged as ahigh throughput technique.

While this invention has been described in reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. As an example, the invention applies to products using anytype of semiconductor chip, discrete or integrated circuit, and thematerial of the semiconductor chip may comprise silicon, silicongermanium, gallium arsenide, or any other semiconductor or compoundmaterial used in integrated circuit manufacturing.

As another example, the invention applies to many semiconductor devicetypes other than the example of an QFN/SON devices described, forinstance surface mount devices, small outline devices, and leadeddevices.

As another example, the process step of stamping the leadframes from asheet of base metal may be followed by a process step of selectiveetching, especially of the exposed base metal surfaces in order tocreate large-area contoured surfaces for improved adhesion to moldingcompounds. The sequence of plated layers according to the invention canaccommodate any such specially etched leadframe base structures.

It is therefore intended that the appended claims encompass any suchmodifications or embodiment.

1. A leadframe strip comprising: a structure made of a base metal, thestructure having a plurality of surfaces; and a layer of noble metal onthe base metal surfaces, the noble metal layer including a layer of goldand an outermost layer of palladium in contact with the gold layer. 2.The leadframe strip according to claim 1 further comprising a nickellayer between the base metal surfaces and the noble metal layer, thenickel layer in contact with the base metal surfaces and with the goldlayer.
 3. The leadframe strip according to claim 1 wherein the basemetal is selected from a group consisting of copper, copper alloy,aluminum, iron-nickel alloy, and Kovar.
 4. The leadframe strip accordingto claim 1 wherein the gold layer has a thickness between about 2 and 5nm.
 5. The leadframe strip according to claim 1 wherein the gold layerthickness is about 3 nm.
 6. The leadframe strip according to claim 1wherein the palladium layer has a thickness between about 5 and 15 nm.7. The leadframe strip according to claim 1 wherein the palladium layerthickness is about 10 nm.
 8. The leadframe strip according to claim 1wherein the nickel layer has a thickness between about 0.5 and 2.0 μm.9. A semiconductor device comprising: a leadframe having a structuremade of a base metal, the structure including a chip mount pad and aplurality of lead segments; a layer of noble metal on the base metal,the noble metal layer including a gold layer and an outermost layer ofpalladium in contact with the gold layer; a semiconductor chip attachedto the chip mount pad; conductive connections spanning from the chip tothe lead segments; and polymeric encapsulation material covering thechip, the connections, and portions of the lead segments.
 10. The deviceaccording to claim 9 further comprising a nickel layer for the leadframeso that the nickel layer is between the base metal and the noble metallayer, the nickel layer in contact with the base metal and with the goldlayer.
 11. The device according to claim 9 wherein the connections arebonding wires.
 12. The device according to claim 9 further comprisingreflow metals on those portions of the segments, which are not coveredby the encapsulation material.
 13. A method for fabricating a leadframecomprising the steps of: providing a structured base metal strip havinga plurality of surfaces; plating a gold layer to cover the base metal;and plating a palladium layer to cover the gold layer.
 14. The methodaccording to claim 13 further comprising the step of plating a nickellayer on the base metal surfaces before the step of plating the goldlayer, whereby the nickel layer is in contact with the base metalsurfaces and with the gold layer.
 15. The method according to claims 13,wherein the steps of plating are electrolytic plating.
 16. The methodaccording to claims 13, wherein the steps of plating are electrolessplating.
 17. The method according to claim 13 wherein the gold layer hasa thickness between about 2 and 5 nm.
 18. The method according to claim13 wherein the gold layer is about 3 nm thick.
 19. The method accordingto claim 13 wherein the palladium layer has a thickness between about 5and 15 nm.
 20. The method according to claim 13 wherein the palladiumlayer is about 10 nm thick.
 21. The method according to claim 13 whereinthe nickel layer has a thickness between about 0.5 and 2.0 μm.